Bonding 2017-07-17T15:13:15+00:00


Room temperature wafers bonding equipment and service

  • Home designed plasma assisted UHV vacuum system for wafer bonding
  • Surface of wafers are activated using plasma source in the high vacuum chamber
  • Wafers are pressed inside the vacuum
  • Active atoms on the surface of wafers diffuse and form an atomic diffusion bond
  • Bond strength is so high that it is impossible to separate the wafers without breakage
  • Materials with different thermal expansion coefficients can bond to each other since no heating is required
  • Brittle materials such as InP or GaAs can bond to Silicon or other materials since no high forces are required
  • No intermediate layer is required so the bond interface is transparent to light and heat.


  • Transparent optical bonding
  • Bonding of photodetector and various optical elements on different substrates
  • Wafer level packaging
  • MEMS encapsulation and device fabrication
  • Functional wafer fabrication such as lithium niobate thin films on Silicon


  • No intermediate layers
  • No heating is required
  • No high force or high pressure is required
  • Very strong bond higher than yield strength of many materials is obtained
  • Dissimilar wafer bonding up to 4″ wafers

Example Substrates

  • GaAs, LiNbO3, Quartz, Silicon, GaN, Germanium, Saphire
  • Metal to metal surface bonding
  • Oxide to metal bonding

  • Semiconductor to semiconductor bonding
  • Semiconductor to oxide bonding
  • Oxide to oxide bonding


Parameter Substrate I Substrate II
Material Silicon, Lithium Niobite, Quartz, GaAs, InP Silicon, Lithium Niobite, Quartz, GaAs, InP
Diameter 25 mm, 100 mm 25 mm, 100 mm
Thickness 100 µm to 1 mm 100 µm to 1 mm
Surface Roughness <0.5 nm <0.5 nm