Bonding
Room temperature wafer bonding equipment and service
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Plasma surface assisted activated bonding system
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Surface of wafers are activated using plasma source in the high vacuum chamber
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Wafers are pressed inside the vacuum
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Chemically active atoms on the surface of wafers bond
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Bond strength is so high that it is impossible to separate the wafers without breakage
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Materials with different thermal expansion coefficients can bond to each other since no heating is required
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Brittle materials such as InP or GaAs can bond to Silicon or other materials since no high forces are required
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Sub-nanometer intermediate layer make the bond interface transparent to light and heat.
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Load-locked system allows high througput
Applications
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Bonding for high power electronic applications such as Ga2O3 on diamond or SiC
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Bonding of photodetector and various optical elements on different substrates
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Wafer level packaging
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MEMS encapsulation and device fabrication
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Functional wafer fabrication such as lithium niobate thin films on Silicon
Features
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Sub-nanometer intermediate layers
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No heating is required during bonding. Truly room temperature
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No high force or high pressure is required
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Very strong bond higher than yield strength of many materials is obtained
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Substrate agnostic. Anymaterial can be bonded to any other material. The only requirement is atomically smooth surface
Example Bonded Substrates
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GaAs, LiNbO3, Quartz, Silicon, GaN, Germanium, Sapphire, Diamond
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Metal to metal surface bonding
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Oxide to metal bonding
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Semiconductor to semiconductor bonding
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Semiconductor to oxide bonding
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Oxide to oxide bonding
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