Room-Temperature Wafer Bonding for Next-Generation Photonics
Partow Technologies enables next-generation heterogeneous integration through advanced room-temperature Surface Activated Bonding (SAB) and thin-film transfer technologies. Our platform supports the integration of lithium niobate, GaN, SiC, diamond, and other advanced materials for high-performance photonic, RF, quantum, and semiconductor applications.
By eliminating the need for high-temperature bonding, Partow’s SAB technology reduces thermal stress, preserves material integrity, and enables scalable integration of dissimilar materials that are difficult or impossible to combine using conventional processes.
Our technologies support a broad range of emerging applications, including AI datacenter photonics, optical interconnects, electro-optic sensing, microwave photonics, THz systems, quantum photonics, and advanced power electronics.
Our Leadership
Payam Rabie, Ph.D.
Founder & CEO
Dr. Payam Rabie founded Partow Technologies to advance next-generation semiconductor and photonic manufacturing. He leads the company's strategy, product development, and commercialization, with a focus on innovative room-temperature wafer bonding technologies and thin-film lithium niobate (TFLN) photonic integrated circuit (PIC) platforms.
About Us
Our Capabilities
Partow provides expertise across the full integration stack, including:
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Surface Activated Wafer Bonding
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Ion-Sliced Thin-Film Transfer
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Thin-Film Lithium Niobate (TFLN)
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Heterogeneous Photonic Integration
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Advanced Wafer Engineering
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Electro-Optic Devices and Sensors
Our capabilities include wafer-scale bonding, photonic device fabrication, process development, and custom substrate engineering for research, defense, and commercial markets.
Partow Technologies is advancing the future of photonic and semiconductor integration through scalable, low-temperature manufacturing solutions for next-generation systems.
Press
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Partow Technologies will showcase its room-temperature wafer bonding solution at IWGO 2026, August 2–7, in College Park, Maryland. Visit us at Exhibit Space #14.
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Feb 2026, Partow's EO Sensor Enables Breakthrough Accelerator Sensor Technology at Argonne Facility (ANL)
Jan 2026, Partow will be in Photonics West 2026, January 20-22 in San Francisco. Booth 2367
Oct 2025, Join Partow at SEMICON West 2025, October 7–9 in Phoenix, Arizona, at booth #5482
Feb 2025, Partow received SBIR phase I award to develop Electro-optic sensors for non-destructive electron beam diagnostics for DOE
Feb 2024, Partow received STTR phase II award to develop UHV room-temperature wafer bonding system for DOD.
August 2024, "Electro-optic electric field sensor and method of fabrication", has been officially granted. Patent No.: US 11,815,747