Enabling heterogeneous photonic and semiconductor integration using room-temperature surface activated bonding.
Room-Temperature Wafer Bonding for Next-Generation Photonics
Partow Technologies enables next-generation heterogeneous integration through advanced room-temperature Surface Activated Bonding (SAB) and thin-film transfer technologies. Our platform supports the integration of lithium niobate, GaN, SiC, diamond, and other advanced materials for high-performance photonic, RF, quantum, and semiconductor applications.
By eliminating the need for high-temperature bonding, Partow’s SAB technology reduces thermal stress, preserves material integrity, and enables scalable integration of dissimilar materials that are difficult or impossible to combine using conventional processes.
Our technologies support a broad range of emerging applications, including AI datacenter photonics, optical interconnects, electro-optic sensing, microwave photonics, THz systems, quantum photonics, and advanced power electronics.
About Us
Our Capabilities
Partow provides expertise across the full integration stack, including:
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Surface Activated Wafer Bonding
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Ion-Sliced Thin-Film Transfer
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Thin-Film Lithium Niobate (TFLN)
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Heterogeneous Photonic Integration
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Advanced Wafer Engineering
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Electro-Optic Devices and Sensors
Our capabilities include wafer-scale bonding, photonic device fabrication, process development, and custom substrate engineering for research, defense, and commercial markets.
Partow Technologies is advancing the future of photonic and semiconductor integration through scalable, low-temperature manufacturing solutions for next-generation systems.