THICK FILMS
For thicker films between several microns to several tens of microns, we provide wafer bonding and thinning service.The top wafer can be various crystals such as Lithium niobate, Lithium tantalate, Quartz, Silicon and etc. The thinning is achieved by wafer grinding and polishing. Final thickness for the thick film is several microns with about +-1 micron uniformity.
Thick film crystal layer on silicon product specification
| Part Number | LN-X- 5000-2000- 75-100 | LN-X-xxx-xxx-xx-100 |
|---|---|---|
| Description | Various crystals (LN, LT, …) on silicon dioxide on silicon | |
| Top crystal layer | ||
| Parameter | Standard | Custom Order |
| Orientation | X-cut | X-cut, Y-cut or Z-cut |
| Primary Flat (on LN film) | +z | TBD |
| Secondary Flat (on LN film) | -Y | TBD |
| Lithium Niobate Film Diameter | 75 mm | 75 mm – 100 mm |
| Thickness Range | 5 μm | > 5 μm |
| Thickness Uniformity | ±0.5 μm | < 15% |
| Surface Roughness | < 1 nm | < 1 nm |
| Defective Area | < 20% | < 20% |
| Intermediate SiO2 layer | ||
| Parameter | Standard | Custom Order |
| Thickness Range | 2,000 nm | 0 nm – 2,000 nm |
| Thickness Uniformity | < 3% | <15% |
| Silicon Substrate | ||
| Parameter | Standard | Custom Order |
| Substrate Thickness | 0.525 mm | 0.1 – 1 mm |
| Substrate Diameter | 100 mm | 100 |
| Substrate Resistivity | > 5000 ohm-cm | 0 – 20,000 ohm-cm |
Custom thick film bonding and thinning service
| Parameter | Substrate 1 | Substrate 2 |
|---|---|---|
| Material | Silicon | Silicon, Lithium niobite, Quartz, GaAs, InP ….. |
| Diamater | 25 mm, 100 mm | 25 mm, 100 mm |
| Thickness | 0.5 mm | > 5 μm |
| Surface roughness | < 0.5 nm | < 0.5 nm |